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 SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
2SC1783
DESCRIPTION *With TO-3 package *High power dissipation *High speed ,high current APPLICATIONS *For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 180 120 6 10 100 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=180V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V 30 MIN 120 6
2SC1783
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V
1.5 2.0 100 100
V V A A
165 10
pF MHz
2
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1783
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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